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| 2SK1835 Silicon N Channel MOS FET Application High speed power switching TO-3P Features * * * * * High breakdown voltage (VDSS = 1500V) High speed switching Low drive current No secondary breakdown Suitable for switchingregulator G 1 2 D 3 1. Gate 2. Drain (Flange) 2. Drain (Flange) 3. Source 3. Source S Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature * ** PW 10 s, duty cycle 1 % Value at Tc = 25 C Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 1500 20 4 10 4 125 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 2SK1835 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 1500 Typ -- Max -- Unit V Test Conditions ID = 10 mA, VGS = 0 VGS = 20 V, VDS = 0 VDS = 1200 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 2 A VGS = 15 V * ID = 2 A VDS = 20V * VDS = 10 V VGS = 0 f = 1 MHz ID = 2A VGS = 10 V RL = 15 -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- -- 2.0 -- -- -- -- 4.6 1 500 4.0 7.0 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 0.9 1.4 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test -- -- -- -- -- -- -- -- 1700 230 100 25 80 230 80 0.85 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = 4 A, VGS = 0 IF = 4 A, VGS = 0, diF / dt = 100 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 2500 -- ns -------------------------------------------------------------------------------------- 2SK1835 Power vs. Temperature Derating 200 Maximum Safe Operation Area 50 30 Pch (W) s s 10 0 10 s m 1 150 10 Drain Current I D (A) Channel Dissipation 3 1 D C PW O pe ra 100 = n 10 (T tio m s (1 c = sh 50 0.3 0.1 Operation in this area is ilmited by R DS (on) Ta = 25C 25 ot ) C ) 0 50 100 Case Temperature 150 Tc (C) 200 0.05 10 30 100 300 1000 3000 10000 Drain to Source Voltage VDS (V) Typical Output Characteristics 5 10 V Pulse Test 4 Drain Current I D (A) Drain Current I D (A) 6V 3 4 8V 5 Typical Transfer Characteristics Tc = -25C VDS = 20 V Pulse Test 25C 3 75C 2 5V 2 1 V GS = 4 V 1 0 10 20 30 40 50 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 2SK1835 Drain-Source Saturation Voltage vs. Gate-Source Voltage 25 Pulse Test Drain to Source Saturation Voltage V DS (on) (V) 20 Static Drain-Source on State Resistance R DS (on) ( ) 20 10 5 50 Static Drain-Source on State Resistance vs. Drain Current Pulse Test VGS = 10 V 15 3A 15 V 10 2A 2 1 0.5 0.2 5 ID = 1 A 0 4 8 12 16 20 0.5 1 2 5 10 20 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain-Source on State Resistance vs. Temperature 25 10 5 Forward Transfer Admittance |yfs| (S) Forward Transfer Admittance vs. Drain Current Static Drain-Source on State Resistance R DS (on) ( ) 20 Pulse Test V GS = 15 V Pulse Test V DS = 20 V Tc = -25C 2 1 15 ID= 3 A 10 2A 5 1A 25C 75C 0.5 0.2 0 -40 0.1 0.05 0 40 80 120 160 0.1 0.2 0.5 1 2 5 Case Temperature T C (C) Drain Current I D (A) 2SK1835 Body-Drain Diode Reverse Recovery Time 5000 10000 Typical Capacitance vs. Drain-Source Voltage Reverse Recovery Time trr (ns) 2000 Capacitance C (pF) 1000 500 1000 Ciss di / dt = 100 A / s VGS = 0, Ta = 25C Coss 200 100 5 0.1 100 Crss V GS = 0 f = 1 MHz 10 0 0.2 0.5 1 2 5 10 10 20 30 40 50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS Dynamic Input Characteristics 1000 ID =4A Drain to Source Voltage V DS (V) 800 VGS 600 V DS V DD = 600 V 400 400 V 250 V 200 V DD = 600 V 400 V 250 V 0 40 80 120 160 0 200 4 20 8 12 16 Switching Time t (ns) 20 1000 500 Switching Characteristics td (off) 200 100 50 tr tf VGS = 10 V, duty PW = 5 s 0.1 0.2 1% 10 0.05 0.5 1 2 5 Gate Charge Qg (nc) Drain Current I D (A) 2SK1835 Reverse Drain Current vs. Source to Drain Voltage 5 Pulse Test Reverse Drain Current I DR (A) 4 3 2 1 V GS = 15 V 0,-5 V 0 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance s (t) 3 D=1 0.5 0.3 0.2 0.1 0.1 0.05 0.02 1 sh ot P ulse 1.0 Tc = 25C ch - c(t) = s(t) . ch - c ch - c = 1.0C / W, Tc = 25C PW D= T P DM T PW 0.03 0.01 10 0.01 100 1m 10 m Pulse Width PW (S) 100 m 1 10 2SK1835 Switching Time Test Circuit Waveforms Vin Monitor 90 % Vout Monitor D.U.T RL Vin 10 V 50 Vin Vout 10 % 10 % 10 % . . V DD = 30 V td (on) 90 % tr 90 % td (off) tf |
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